发明名称 DRIVE CIRCUIT OF MOSFET
摘要 PURPOSE:To simply construct a drive circuit by obtaining a voltage applied between the gate and the source by a DC power source connected with an inverter. CONSTITUTION:When a transistor 8 is turned ON in a drive circuit 4, a current is flowed from a DC power source 1 in a circuit of resistors R5, R6, and the transistor 8, thereby applying a voltage between the source terminal 5 of a MOSFET 2-1 and a gate terminal D, and the MOSFET 2-1 is shifted to ON state. A Zener diode ZD1 prevents the gate of the MOSFET 2-1 from becoming an overvoltage, and the Zener voltage is normally set to approx. 15V. Thus, since the transistor 8 used as a drive semiconductor switch is operated in the saturated state, its loss can be reduced, and the drive circuit can be simplified.
申请公布号 JPS60249876(A) 申请公布日期 1985.12.10
申请号 JP19840104593 申请日期 1984.05.25
申请人 HITACHI SEISAKUSHO KK;HITACHI ENGINEERING KK 发明人 ENDOU TSUNEHIRO;ARAKAWA NOBUAKI;KATOU NOBUAKI
分类号 H02P27/06;H02M7/5387;H03K17/687 主分类号 H02P27/06
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