发明名称 SEMICONDUCTOR LASER ELEMENT
摘要 PURPOSE:To allow little astigmatism in existence by oscillation with the basic lateral mode stable in the state of photo output in high degrees and in the coincidence of beam waist position laterally and longitudinally by a method wherein the titled element is so constructed that the center of a stripe channel groove serving as the current path is a non-conduction region, and that current is injected to the active layer exclusively in two directions on both sides of that region. CONSTITUTION:A current block layer 15 is left in the central groove of a channel groove 22, and a laser operating multilayer crystal of double hetero junction structure is grown thereon by LPE, thus producing the titled element as shown by the drawing. The channel groove 22 has the non-conductive region at the center because of the layer 15 remaining along the stripe direction, and the part where the layer 15 has been removed along both side edges of the groove 22 by using that region as the center isolation band serves as a current path of S width. Therefore, passing current via p-side electrode 21 and an n-side electrode 20 causes carriers to be injected to an active layer 17 from the current paths on both side edges of the groove 22. This structure makes light confinement even in the state of low photo output in the same manner as in the state of high photo output and allows no variation in beam waist position without the delay of photo phase.
申请公布号 JPS60249383(A) 申请公布日期 1985.12.10
申请号 JP19840105878 申请日期 1984.05.24
申请人 SHARP KK 发明人 YAMAMOTO SABUROU;MORIMOTO TAIJI;MIYAUCHI NOBUYUKI;SAKII SHIGEKI
分类号 H01S5/00;H01S5/223 主分类号 H01S5/00
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