| 摘要 |
PURPOSE:To markedly reduce the generation of crystal defects during the process of manufacturing LSIs and VLSIs by a method wherein Si substrates sliced out of Czochralski Si single crystals are heat-treated under a specific condition. CONSTITUTION:An Si substrate sliced out of a Czochralski Si single crystal is heat-treated at a temperature of 950-1,250 deg.C for 10sec-10min. Such a heat treatment makes the resistivity completely recover to a resistivity determined by the impurity concentrations of the III group and V group such as boron and phosphorus. Thereby, a good-quality substrate with a very small amount of crystal defect due to the deposition of oxygen during the device process can be obtained, and the treatment of donar erasure can be carried out simultaneously in a short time. |
