| 摘要 |
PURPOSE:To form a deposited film containing silicon atoms at a high film-forming rate with energy level reduced, while keeping high quality, by forming a gas atmosphere of hydrogen, specific chain silicon halide compound and compound of a III-family or V-family element in a deposition chamber, and by feeding heat energy. CONSTITUTION:A gas atmosphere of hydrogen, chain silicon halide compound expressed by a general expression SinX2n+2 [where, (x) stands for halogen atoms and (n) an integer of 1-6] and compound containing a III-family or V-family element is formed in a deposition chamber 1 in which a substrate 2 is arrayed, and by feeding heat energy to these compounds, a deposited film containing silicon doped with the said element is formed on the substrate 2. Feeding heat energy to the said gas is done by using, for example Joule heat generating device 4 and high frequency heating means, etc. |
