| 摘要 |
PURPOSE:To enable the etching with the use of photoresist, the formation of a desired fine pattern and the peeling of the pattern when it becomes unnecessary, by treating the surface of silicone resin with oxygen plasma under a reduced pressure before applying a resist material. CONSTITUTION:Acetone solution of ladder silicone oligomer is rotationally applied on a silicone wafer 101 whose surface is oxidized, and then dried to obtain an oligomer film 103 having a thickness of about 0.8mum. This structure is held in oxygen plasma under a reduced pressure and then treated with hexamethylenediamine. A photoresist film 104 is formed by rotationally applying it to the thickness of 0.5mum. A resist pattern 105 is obtained by exposure and the structure is etched with reaction gas consisting of CF4 loaded with oxygen so as to obtain a desired pattern 106. The structure is then treated with dilute fluorine oxide or Freon plasma, and dipped in acetone to melt and remove the oligomer pattern 105. |
