| 摘要 |
PURPOSE:To form a deposited film containing silicon atoms at a high film-forming rate with energy level reduced, while keeping high quality, by forming a gas atmosphere of specific silicon compound and compound containing I -family or V- family atoms in a deposition chamber, and by feeding heat energy. CONSTITUTION:A gas atmosphere of silicon compound expressed by a general expression SinHmXr [where, (x) stands for halogen and each of (n), (m) and (r) an integer of 1 or more, and m+r=2n+2] and compound containing I -family or V-family atoms is formed in a deposition chamber 1 in which a substrate 2 is arrayed, and by feeding heat energy to these compounds, a deposited film containing silicon atoms and I -family or V-family atoms is formed on the substrate 2. In order to excite and decompose efficiently, and to deposite a better quality a-Si film, it is desired that the number (n) of silicon atoms in the compound is preferably 3-7, and most suitably 3-5. |
