发明名称 TREATMENT OF SEMICONDUCTOR SURFACES AND MIXTURE USED IN PROCESS
摘要 FIELD: chemistry. ^ SUBSTANCE: invention pertains to compositions used for treating surfaces and the method of treating the surface of a substrate, using such a composition. The essence of the invention is that, the cleaning solution contains water, hydrogen peroxide, an alkaline compound and 2,2-bis-(hydroxyethyl)-(iminotris)-(hydroxymethyl)methane as a chelating additive. The alkaline compound is preferably chosen from a group containing an organic base, ammonia, ammonium hydroxide, tetramethylammonium hydroxide, and most preferably from a group containing ammonia and ammonium hydroxide. Content of the chelating additive is 1000-3000 ppm. The cleaning solutions are used for the process of treating the surface, including cleaning, etching, polishing, and film-formation, for cleaning substrates, made from semiconductor, metal, glass, ceramic, plastic, magnetic material, and superconductors. The method involves treatment of semiconductor substrate(s) using a cleaning solution and drying the given semiconductor substrate(s) after washing in water. ^ EFFECT: increased stability of the solution at high temperature and increased degree of purification of surfaces. ^ 3 cl, 2 tbl, 15 dwg, 3 ex
申请公布号 RU2329298(C2) 申请公布日期 2008.07.20
申请号 RU20050117609 申请日期 2003.10.10
申请人 BASF AKTSIENGEZEL'SHAFT 发明人 BERNER MARK;KILIAN GERNOD;RAJN RUDOL'F;ARNOL'D LUTSIJA;SHUSTER MIKHAEHL';LEOPOL'D ALEKSANDER
分类号 C11D7/18;C11D3/39;C11D7/06;C11D7/32;C11D11/00;H01L21/306 主分类号 C11D7/18
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