| 摘要 |
PURPOSE:To avoid a difficulty to make an inorganic material to possess sensitivity to light by a method wherein the inorganic material having superior resistance to oxygen reactive ion etching is selected, and etching according to optical excitation is adopted for patterning thereof. CONSTITUTION:After an organomacromolecular film 2 is rotatingly applied on a material to be etched, the film is baked. A metal film 5 is adhered on the molecular film 2. First reactive gas is introduced on the metal film 5, and ultraviolet rays or X-rays having an absorption zone in the first gas are projected to the desired part to etch the metal film 5 selectively. The molecular film 2 at the exposed part is etched selectively. Accordingly, a difficulty to make the inorganic material to possess sensitivity to light can be avoided.
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