| 摘要 |
PURPOSE:To prevent the lowering of heating power on the circumferential part by a method wherein, in the heat treatment device to be used for formation of a shallow junction by suppressing the redistribution of impurities introduced in a semiconductor substrate, the heating power on the circumferential part of a substrate is made larger than that on the center part. CONSTITUTION:In the short period heat treatment device with which a heat irradiation is performed on a semiconductor substrate W using a halogen lamp array 11, a heat-reflecting member 13 is added on the circumference of the substrate W located in a square-shaped quartz pipe 10 wherein the substrate W is placed. The heat-reflecting member 13 is constructed in ring shape having a parabolic cross-section, and heat radiation is prevented by focussing heat rays, which are going to escape in radial direction from the circumferential part in parallel with the face W of the substrate, on the circumferential part of the substrate. As a result, the circumferential part of the substrate can be heated up in the same degree as the center part, thereby enabling to prevent the lowering of the yield of production caused by the non-uniformity of heating. |
