| 摘要 |
PURPOSE:To form a deposited film using heat energy of a low level and at a high film forming speed by a method wherein the halogen derivative of a normal chain type or a branched-chain type Si hydride compound and a compound of H are heated. CONSTITUTION:After a supporter 2 is put on a supporting base 3 in a deposition chamber 1, the inside of the chamber is depressurized, a current is flowed to a heater 4, and raw material gas for formation of an a-Si film is sent in the deposition chamber 1. The raw material gas thereof is a chain type Si halide compound to be expressed by SinXmYl [X and Y are different halogen atoms respectively, (n) is the integer of 1-6, (m) and (l) are the integer of 1 or more respectively, and m+l=2n+2]. A gaseous atmosphere of the compound mentioned above and H is formed in the chamber, the compound and H are excited to be decomposed by utilizing heat energy, and a deposited film containing Si is formed on the substrate. |
