| 摘要 |
PURPOSE:To form a deposited film containing silicone atom at high filming speed while sustaining high quality at low energy level by means of utilizing heat energy at low level as exciting energy. CONSTITUTION:A cyclic halogenated silicate represented by a structural formula: SinXmYl [where X and Y respectively represent different halogen atoms while (n) represents integer of 3-6 also (m) and (l) respectively represent integer exceeding 1 while m+l=2n] and gaseous atmosphere of hydrogen are formed in a vessel containing a substrate while those compounds are supplied with heat energy to form a deposited film containing silicon on said substrate. The cyclic halogenated silicate represented by said structural formula is the halogen derivative of the cyclic hydrogenated silicate (cyclic silane compound) SinH2n, a highly stable compound to be produced easily. The (n) value is limited to the integer of 3-6, since the larger the (n) value, the easier the decomposition but the harder the evaporation and the synthesis while deteriorating the efficiency of decomposition. |
