| 摘要 |
PURPOSE:To reduce the limitation for the miniaturization and integration in a countermeasure against a soft-error casued by radioactive particles by each forming first and second FETs to a semiconductor crystal substrate and a semiconductor film shaped onto the substrate. CONSTITUTION:An N type channel first MOSFET201 is constituted while a P type silicon crystal substrate 110 is used as a substrate region, a conductor film 101 as a first word line 204 and a gate electrode and N type regions 102, 103 as conductive electrodes, and a P type channel second MOSFET202 is constituted while an N type region 11 formed to a silicon film is employed as a substrate region, a conductor film 104 as a second word line 205 and a gate electrode and P type regions 105, 106 as conductive electrodes. Conductor films 108, 109 each function as a reference potential power supply line 206 and a bit line 207. An insulator film 107 forms a cell capacitance 203. MISFETs of both P and N channels can be brought near to any extent, and degree of integration can be increased. |
