| 摘要 |
PURPOSE:To improve the uniformity of sintering by depositing and forming CdTe1-xSex on a transparent conductive coating that is formed on a transparent glass surface plate and forming a photoconductive layer through the sintering under specific conditions and then a high resistance layer made of As2Se3 on the layer. CONSTITUTION:CdTe1-xSex is applied on a transparent conductive coating 2 formed by applying SnO2 on the surface of a transparent glass surface plate 1 at a substrate temperature of 100-400 deg.C under vacuum or under inert gas or the inert gas containing oxygen. Then, the glass surface plate 1 coated with CdTe1-xSex is retained by a holder 5 and a quartz pipe is contained together with the Te vapor generation material and then the pipe is exhausted. Subsequently, a photoconductor layer 3 is formed by introducing nitrogen, setting the pressure to 0.1-49Torr, containing the quartz pipe in a furnace, and sintering CdTe1-xSex at 450-650 deg.C and at a total pressure of the Te vapor and nitrogen of 0.1-50Torr. Then, a high resistance layer 4 is formed by applying As2Se3 on the photoconductor layer 3. As a result, the uniformity of sintering is improved and the uniformity of sensitivity and dark current is also improved. |
