| 摘要 |
PURPOSE:To prevent electrostatic breakdown by forming a lateral PNP type transistor element as a protective element in a semiconductor integrated circuit with the lateral PNP type transistor element. CONSTITUTION:An N<-> type epitaxial layer 11 is formed onto a P type silicon semiconductor substrate 10, and P type emitter regions 16, 17, P type collector regions 18, 19 and an N<+> type base connector region 20 are shaped to the surfaces of island regions 13, 14 as a base region 13a in a lateral PNP type transistor element 2 and a base region 14a in a lateral PNP type transistor element 5 as a protective electment. A collector and an emitter in the transistor element 5 are connected in parallel between a base and an emitter in the transistor element 2. When surge voltage is applied to external terminals 4, surge votage is shared respetively and adsorbed by the element 2 and the element 5. |
