| 摘要 |
PURPOSE:To prevent electrostatic breakdown by forming a lateral PNP type transistor element as a protective element in a semicondutor integrated circuit device with an NPN type transistor element. CONSTITUTION:An N<-> epitaxial layer 11 is formed on a P type silicon semiconductor substrate 10, and a P type base region 16, a P type emitter region 17 and a P type collector region 18 are shaped to the surfaces of island regions 13, 14 as a collector region 13a in an NPN type transistor element 5 as a base region 14a in a lateral PNP type transistor element 5 as a protective element. An N<+> type emitter region 19 is formed to the surface of the region 16, and an N<+> type contact region 20 is shaped in the region 13a. A collector and an emitter in the transistor element 5 are connected in parallel between a base and a collector in the transistor element 2. When surge voltage is applied to external terminals 4, surge voltage is shared respectively and absorbed by the element 2 and the element 5. |
