| 摘要 |
PURPOSE:To reduce the wiring resistance by providing an electrode wiring of double-layer structure with a tungsten silicide layer having an excess of silicon which is in direct contact with an insultion film and a tungsten silicide layer having almost standard composition which has been formed thereon. CONSTITUTION:A tungsten silicide wiring 18 is constructed in a double layer: a tungsten silide layer 16, having a composition such as W-Si3 or W-Si4 containing an excess of silicon, is arranged in the lower layer part of the wiring in direct contact with insulation films 12, 15, in order to enhance the adhesion of the wiring to an insulation film; further, a tungsten silicide layer 17 having a standard composition is arranged thereon. Since the tungsten silicide layer containing an excess of silicon has a specific lower than a polycrystalline Si layer by approx. 1/5-1/10, the wiring resistance can be reduced and the wiring can be formed at a low level while keeping a low resistance. Therefore, the decrease in quality of the insulation film on a wiring at the stepwise difference of wiring can be prevented. Besides, successive formation is enabled only by changing the composition of the reaction gas with the same device; accordingly, the manufacturing process can be simplified. |
