| 摘要 |
PURPOSE:To obtain a composite thin film structure having excellent heat-resistance and matching well to a group III-V semiconductor, by forming a garnet- type single crystal thin film on at least a part of the surface of a corundum-type or spinel-type single crystal substrate. CONSTITUTION:A heat-resistant film 10 of evaporated metal is applied to at least a part of the surface of a corundum-type or spinel-type single crystal substrate 9, and a fusible garnet-type single crystal thin film 11 is formed on the metal film. A part of the surface of the thin film 11 is converted to single crystal, and the crystallized part is used as a seed crystal for the epitaxial growth of a magnetic garnet single crystal thin film 12 exhibiting Faraday effect. If necessary, an Si single crystal thin film 13, a Ge single crystal thin film 14, a GaAs single crystal thin film 15 and Ga1-xAlxAs mixed crystal thin film or In1-xGax As1-yPy mixed crystal thin film 16 are applied to a part of the substrate 9. |
