| 摘要 |
<p>PURPOSE:To obtain targets reduced in variation of the sensitivity generating immediately after actuation of an image pickup tube by a method wherein the thickness of a film containing substance which forms negative space charges in selenium is made specific. CONSTITUTION:The sensitivity is increased by adding tellurium to part of a photoconductor layer made mainly of selenium in the direction of film thickness. To either at least part of the region with addition of tellurium or at least part of the region adjacent to this region or to both thereof, an oxide and a fluoride which form negative space charges in selenium and one or more of elements belonging to the II group, III group, or VII group and forming said charges in selenium are contained at a concentration of more than 10ppm and less then 1% on the average of weight ratio. The thickness of a film containing substance which forms negative space charges in selenium as above-mentioned is 20-90Angstrom . For example, 20% concentration of As and 1,500ppm concentration of GaF3 are evenly distributed over a sensitizing auxiliary layer c' of 50Angstrom thickness in the direction of film thickness.</p> |
