| 摘要 |
PURPOSE:To realize a new high frequency high output semiconductor device having a two-way signal amplifier function by providing the 1st terminal connected to a collector of the 1st transistor (TR), the 2nd terminal connected to a collector of the 2nd TR and the 3rd terminal connected to a common base of the 1st and 2nd TRs. CONSTITUTION:An N-channel epitaxial layer used as a collector region is formed on a P<->-channel silicon substrate, said epitaxial layer is separated electrically into two regions 10', 10'' by a P insulation separating region 15, P-channel base regions 1', 1'' and N<+> emitter regions 2', 2'' are formed on each region, contact windows 4', 4'', 5', 5'', 6', 6'', are formed to surface insulation films 3', 3'', 3''', and base electrode 7', 7'' are connected electrically by an electrode pattern 11. Suppose that most of signals enters a TRT2 when a signal comes from a terminal A1, the signal is amplified by a TRT2 and the result is outputted to an external circuit through a terminal A2. When the signal comes from the terminal A2 conversely, most of the signals enters the TRT1 and is outputted to the external circuit through the terminal A1. |
