发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To improve the action margin to the noises generated at a power supply line by connecting in series FETs which are controlled by the power supply voltage and the earth potential and feeding back the noises produced with the power supply voltage and the earth potential respectively. CONSTITUTION:The P and W type FETQ2 and Q3 forming an NOR gate of an address buffer ADB are controlled by an address Ai. The P type FETQ5 and Q6 which are always kept on are connected in series between the FTEQ2 and Q3 and the power supply voltage VCC and the earth potential respectively. The FETQ5 and Q6 are controlled by the VCC and the earth potential respectively, and the noises produced with the VCC and the earth potential are fed back. An NOR gate is inactive when those noises are produced. Thus no malfunction is produced to the noises. As a result, the action margin is improved to the noises of a semiconductor IC of an address buffer circuit, etc.
申请公布号 JPS60246095(A) 申请公布日期 1985.12.05
申请号 JP19840100488 申请日期 1984.05.21
申请人 HITACHI SEISAKUSHO KK 发明人 SHINODA KOUJI
分类号 H03K19/0175;G11C11/34;G11C11/408;(IPC1-7):G11C11/34 主分类号 H03K19/0175
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