| 摘要 |
PURPOSE:To enable simple and easy manufacture of the titled element of high realiability, high output, and long lifetime without use of the processes of diffusion and hole boring by a method wherein a circular hole having an inclined side wall is formed in current stricture layer by utilizing the composition-dependence of the melt-back speed during epitaxial growth in liquid phase. CONSTITUTION:An AlzGa1-zAs layer 2 as the current stricture layer is epitaxially grown liquid phase on a GaAs substrate 1 having a cylindrical projection 1b, so as to bury the projection 1b. Utilizin the composition-dependence of the melt- back speed during epitaxial growth in liquid phase, the circular hole 3 having the inclined side wall 2b is formed in the current stricture layer 2. An Aly Ga1-yAs layer 4 as the first clad layer, an AlxGa1-xAs layer 5 as the active layer, and an AlyGa1-yAs layer 6 as the second clad layer are successively grown in liquid phase. This manner enables successive formation of the layers of the element to the process immediately before electrode formation in a process of liquid phase epitaxial growth. |
