| 摘要 |
A heterojunction bipolar transistor having a planar structure comprises a semiconductor composite substrate (10), a collector region (12a, 14a) fashioned thereon of a first conductivity type, a base region (16a, 24) of a second conductivity type fashioned on the collector region, an emitter region (18a, 20a) of the first conductivity type fashioned in the base region, a metal layer (42) fashioned in a recessed section running from the base region to the collector region, an ion implantation layer (32) for the purpose of electrically insulating the metal layer with respect to the base region, a base electrode (54) connected to the base region, an emitter electrode (48) connected to the emitter region and an insulating means (26) for electrically insulating the metal layer, the base electrode and the emitter electrode against one another. The collector region, together with the base region, forms a collector junction. The emitter region, together with the base region, forms an emitter junction. At least one of the collector and emitter junctions represents a heterojunction. The metal layer is connected to the collector region and serves as a collector electrode. The topside of the metal layer essentially lies on the same plane as the surfaces of the base region and emitter region. <IMAGE>
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