发明名称 PATTERN FILM FORMING METHOD
摘要 PURPOSE:To correct white spot defects of an X-ray mask and to repair a conductive pattern on an LSI substrate, by employing vapor of gold, molybdenum, palladium, tantalum or tungsten compound. CONSTITUTION:Compound vapor 7 sprayed on the substrate 1 to be deposited, evaporates after it has stayed there for any time determined by the substrate temperature and the kind of the compound. At this time, a deposited compound layer 9 is produced at the place where the compound has been sprayed. Irradiating laser or particle beam 5 onto the deposited compound layer 9 results in decomposition or combination of the compound to form a pattern film 10 which is deposited increasingly as time proceeds. By employing molybdenum, palladium or tungsten compound as the said compound, an X-ray mask which has sufficient X-ray blocking ability by a film thickness of about 1mum can be provided.
申请公布号 JPS60245227(A) 申请公布日期 1985.12.05
申请号 JP19840101944 申请日期 1984.05.21
申请人 SEIKO DENSHI KOGYO KK 发明人 YAMAMOTO MASAHIRO;SATOU MITSUYOSHI;NAKAGAWA YOSHITOMO
分类号 H01L21/3205;C23C16/18;G03F1/00;G03F1/72;G03F1/74;H01L21/027;H01L21/768 主分类号 H01L21/3205
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