| 摘要 |
PURPOSE:To prevent a short circuit and the diffusion of an impurity, and to improve photovoltaic characteristics remarkably by laminating and forming one or a plurality of films using SiC, TiC, WC or BP as a blank and n amorphous semiconductor layer onto a transparent conductive film surface with irregularities for the antireflection of beams. CONSTITUTION:With a transparent conductive film 2, the side being in contact with a light -transmitting insulating substrate 1 is formed in a plane, but the reverse side, the side on which an amorphous silicon layer must be laminated, is roughened, and one or a plurality of layers of films 3 in thickness of 10-100Angstrom employing SiC, TiC, WC or BP as a blank are laminated and shaped onto the surface of the reverse side. The irregular state of the irregular surface of the transparent conductive film 2 is to some extent relaxed under the state in which the films 3 are laminated and formed, and an amorphous silicon layer 4 is laminated and shaped onto the surface of the films 3, thus preventing a penetration through the amorphous silicon layer 4 of projecting sections, then obviating a short circuit by the insulating properties of the layer 4 even when the projecting sections penetrate the layer 4 and are formed. A diffusion to the amorphous silicon layer of Sn and O as the components of the transparent conductive film is reduced largely. |
