| 摘要 |
PURPOSE:To form stepless electrode, wirings or resistor by emitting an electron beam onto a thin film of an alloy made of two types or more elements to vary the resistance value of the portion having no mask. CONSTITUTION:After an interelement separating oxide film 202, a gate oxide film 203, a gate electrode 204, source and drain regions 205, 206 are formed in a single crystal Si substrate 201, an interlayer insulating film 207 is formed on the overall surface, and the surface is flattened. Then, contacting holes are opened at source and drain regions, and metal layers 208, 209 are buried. Then, a tin film 210 of alloy is formed on the overall surface. Thereafter, the desired portion 212 of the film 210 is formed in amorphous state through a pattern due to a mask material having large electron beam blocking function, and insulated. Thus, stepless wiring pattern can be accurately formed without using resist exposing or developing steps. |
