| 摘要 |
PURPOSE:To obtain a reference voltage generator reduced at its temperature change by using Fermi levels of two IGFETs having different conductive types of silicon gate electrodes to form a reference voltage source. CONSTITUTION:A P<+>-gate MOSFETQ1 and an N<+>-gate MOSFETQ2 constituting a differential pair are constituted so that their conductance values are equal. If it is defined that the current values of a constant current source for the differential circuit are I0-I''0, the intersected points 1-1'' of the current values I0-I''0 with the FETQ1 and the intersected points 2-2'' with the FETQ2 show respective gate voltages VG1, VG2 obtained when the differential circuit is balanced. Even if the current of the constant current source is changed from I0 to I'0 and I''0, the differential voltage between said gate a voltages VG1 and VG2 is kept at a constant level and the difference Vth1-Vth2 between the threshold voltages of the FETs Q1 and Q2 appears as it is. Consequently, the P<+>-gate and N<+>-gate FETs Q1, Q2 can be used, a reference Voltage corresponding to a band gap is obtained and the temperature characteristics can be set up to ''0''. |
