| 摘要 |
PURPOSE:To reduce the capacity between the semiconductor substrate and wirings layers as well as to enable to prevent the wiring layers from disconnection by a method wherein the conductive layers are provided on parts excluding the vicinities of the boundaries between the field oxide film and the element isolation regions through an insulator film. CONSTITUTION:An insulator film 14 is provided on each field oxide film 12 excluding the vicinities of the boundaries between element regions 13 and the field oxide film 12, and wiring layers 15 are being provided on this insulator film 14 being extendedly provided on the field oxide film 12. According to this way, the wiring layers 15 are provided on parts of the field oxide film 12, where are places where the stepped parts are comparatively smaller in the vicinities of the boundaries between the element regions 13 and the field oxide film 12, and at the same time, the wiring layers 15 are provided through the insulator film 14 on the field oxide film 12 excluding its parts in the vicinities of the boundaries. As a result, the capacity between the wiring layers 15 and a substrate 11 can be reduced, and at the same time, the wiring layers 15 can be prevented from disconnection in the vicinities of the boundaries. |
