| 摘要 |
PURPOSE:To perform cluster ion beam evaporation of even a material of high boiling point or sublimating point by a method wherein an injection nozzle is opened in a partition wall isolating an evaporation chamber and a vaporization source chamber, and a valve to be used both as a shutter and to open and close the injection nozzle is provided to the partition wall. CONSTITUTION:A nozzle 7 provided between an evaporation chamber 14 and a vaporization source chamber 16 is closed according to a valve 12 to be used both as a shutter, the inside of the evaporation chamber 14 is exhausted up to a superhigh vacuum according to an exhaust system 11a, and the inside of the vaporization source chamber 16 is exhausted up to a high vacuum according to an exhaust system 11b. An electron beam is projected to an evaporating material 9 to vaporize the evaporating material, and when the valve 12 to be used both as the shutter is opened controlling the inside of a space part 15, the vaporized evaporating material in the space part 15 is drawn out to a superhigh vacuum passing through the nozzle 7, and the evaporating material forms a cluster according to a supercooling phenomenon to be generated according to adiabatic expansion. Because the electron beam is projected directly to the evaporating material like this, cluster ion beam evaporation can be performed even with a material of high boiling point and high sublimating point.
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