| 摘要 |
PURPOSE:To reduce the temperature dependency of a reference voltage and production deviation in a voltage regulator by using the Fermi levels of two IGFETs having different conductive types of silicon gate electrodes. CONSTITUTION:Insulation type field effect transistors (IGFETs) T1, T2 are connected in series like a MOS diode form a form a reference voltage generating circuit. An N<+>-gate MOS and a P<+>-gate MOS are used for the TRs T1, T2 and constituted so as to have mutual conductance almost equal to respectively different threshold voltages and the Fermi voltage difference based upon the threshold voltage difference is outputted as a reference voltage. The output voltage is used as the reference voltage Vref of a comparator CP in the voltage regulator. When an input voltage Vin is high as shown in the figure, the output voltage Vout depends upon the reference voltage Vref, and in case of a low voltage, the output voltage Vout depends upon the input voltage Vin. Consequently, power consumption can be saved and the width of the input voltage Vin can be expanded. |
