| 摘要 |
PURPOSE:To form an a-Si deposition film of high quality having superior uniformities of electric and optical characteristics, and stability of quality by a method wherein a straight chain silane compound to be indicated by the general formula of SinH2n+n (n>=1) is used in the mixed condition with a halogen compound for raw material gas. CONSTITUTION:A substrate 2 (polyethylene terephthalate for example) is set on a supporting base 3, pressure inside of a deposition chamber 1 is held to 10<-6> torr, and the temperature of the supporter is held to 225 deg.C according to a heater 4. Then the valves 14-1, 16-1 of an Si2H6 supply source 9, the valves 14-5. 16-5 of an I2 supply source 29, and moreover the valves 14-2, 16-2 of a gas B2H6 supply source 10 for introduction of P type impurities diluted with H2 are opened, for example, and raw material mixed gas is introduced in the deposition chamber 1. Thereupon pressure inside of the deposition chamber 1 is held to 0.1Torr, and a P type a-Si layer (B atom content is 5X10<-3>atomic%) of 400Angstrom layer thickness, for example, is deposited on the substrate 2 at the film forming speed of 45Angstrom / sec. |
