| 摘要 |
PURPOSE:To reduce capacitance between a charge transfer electrode and a substrate of the charge transfer electrode, and to realize high picture quality having no shading by forming a shielding electrode between the charge transfer electrode, to which the reading pulses of signal charges are applied, and an inert region. CONSTITUTION:A shielding electrode 50 is shaped between a charge transfer electrode 21 for a vertical shift register and a channel stop region 22. The shielding electrode 50 is also shaped on other whole inert regions to which the charge transfer electrode 21 is wired. In an image pickup device having such structure, the shielding electrode 50 is kept at fixed potential such as ground potential. Consequently, capacitance among the charge transfer electrode 21 and P type regions 15, 16 is reduced remarkably by the action of the shielding electrode 50. It means that time constants to potential changes of the P type regions 15, 16 are small, the maximum quantity of charges stored in a photoelectric conversion region 17 is also equalized approximately at the central section and in the peripheral section of an image pickup surface, and a shading is hardly generated. |
