| 摘要 |
PURPOSE:To prevent the disconnection of a wiring by arranging emitter-bass- collector in the lateral direction in a high-speed semiconductor device using a hetero-junction. CONSTITUTION:The semiconductor device has a base layer 22 formed on a semi- insulating single crystal substrate 21, an emitter-side barrier layer 23 shaped brought into contact with one side surface of the base layer 22 and an emitter layer 24 and an emitter-contact layer 25 formed on the layer 23 in the order, and a collector-side barrier layer 26 shaped brought into contact with the other side surface of said base layer 22 and a collector layer 27 and a collector-contact layer 28 formed on the layer 26 sequentially. Accordingly, there is no possibility of disconnection even when wirings are shaped because emitter-base-collector are formed in structure in which they are arranged in the lateral direction and stepped sections among them are approximately 200-400[nm] long and are close to an approximately planar shape, and the structure is advantageous to the increase of the degree of integration, together with the facilitation in photolithography processing. |
