| 摘要 |
<p>PURPOSE:To detect the longitudinal lines and the lateral lines of the whole, and to enable to perform detection with a high S/N ratio matched to the characteristic of a pattern at the inspection of the defects of a mask, a reticle and a wafer to be used for manufacture of an integrated circuit by a method wherein a polychrome beam is used, and the direction of illumination is changed in order. CONSTITUTION:Apertures 6, 9 are in conjugate relation, and arranged as to make a positively reflected beam from a wafer not to pass through the aperture 6. When the images C¦1, C'2 on the aperture surface 6 of the irises C1, C2 of an illuminating system are arranged on the aperture surface 9 as to become to symmetrical in relation to an optical axis at the outside of the region surrounded with parallel lines M, N, the diffracted patterns of the longitudinal and lateral lines of the wafer do not pass through an opening C0. When the pattern O1 of a group of lines extended diagonally at 45 deg. is provided in contrast thereto, dispersion of the diffracted beam passes through the opening C0 of the aperture as shown with (X) marks in the figure, and the pattern can be detected at a finally imaging surface 7. Accordingly, defect inspection accorded with the directional property of the pattern can be performed in order by changing over variously the shape of the aperture.</p> |
