| 摘要 |
PURPOSE:To detect special gas with low concentration by providing a metal oxide semiconductor which is formed by mixing palladium, an antimony compound, and the stannic oxide at a composition ratio of specific mol% and baking them at specific temperatures and a means which heats this semiconductor. CONSTITUTION:The palladium, antimony compound, the stannic oxide are mixed at the composition ratio of Sb/Sn=0.2-8mol% and baked in an air atmosphere of 600-850 deg.C or gaseous antimony atmosphere to manufacture the element, which is heated at about 200-400 deg.C. In this state, the heated element increases in resistance greatly with gas concentration of 10- hundres of ppm of hydrogen H2, isobutane iC3H8, monosilande SiH4, etc. |
