| 摘要 |
PURPOSE:To obtain an element, crystal growth thereof is easy and a manufacturing process thereof is simple, by laminating a second conduction type collector layer, a first conduction type base layer and a second conduction type emitter layer on a semiconductor layer in the uppermost section of a semiconductor laser in succession and forming a phototransistor. CONSTITUTION:A mesa 104 held by two grooves is manufactured on a DH substrate in which a P-InP clad layer 101, a non-doped InGaAsP active layer 102 and an N-InP clad layer 103 are grown on a P-InP substrate in succession. An N-InP first current blocking layer 105, a P-InP second current blocking layer 106 and an N-InP buried layer 107 are formed through a liquid phase growth methed, thus manufacturing a semiconductor laser 2. An N-InGaAs collector layer 108, a P-InGaAs base layer 109 and an N-InP emitter layer 110 are laminated in succession, thus manufacturing a phototransistor 3.
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