| 摘要 |
PURPOSE:To obtain a memory device, which inhibits the progress of a chemical reaction even when sufficiently high negative voltage is applied on erasing or writing and holding characteristics and capacitance-voltage characteristics, etc. thereof do not deteriorate due to the repetition of writing and erasing, by including a halogen element in a thin-film silicon semiconductor layer. CONSTITUTION:A halogen element is included in a thin-film silicon semiconductor layer 35 in a nonvolatile memory device having the interfaces consisting of silicon oxide 36 and thin-film silicon semiconductor layers 33, 34, 35. Accordingly, the halogen atoms, which reduce the uncombined bonds to silicon, binding energy thereof is larger than a Si-H union and which inhibit the progress of a chemical reaction, are combined with the uncombined bonds of silicon in place of hydrogen atoms, thus minimizing the deterioration of characteristics. |
