| 摘要 |
PURPOSE:To recombine electrons and holes smoothly, and to increase photoelectric conversion currents by forming a P type a Si:H layer having an energy band gap smaller than P type a-SiC:H between a transparent electrode and P type a-SiC:H. CONSTITUTION:The oxides of indium and tin are evaporated on a glass substrate 21, thus obtaining a transparent electrode 5. A P type a-Si:H layer 10, a P type a-SiC:H layer 6, an I-type a-Si:H layer 22 and an N type a-Si:H layer 23 are evaporated on the electrode 5, thus acquiring a semiconductor layer for photoelectric conversion. Since the band gap of the P type a-Si:H 10 is smaller than that of the P type a-SiC:H 6, an interface level is difficult to be generated on the interface of a junction between the transparent electrode 5 and the P type a-Si:H 10, electrons in the conduction band 1 of the transparent electrode 5 and the holes of valence electrons in the P type a-Si:H 10 are recombined smoothly, and currents smoothly flow.
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