| 摘要 |
PURPOSE:To reduce man-hours on the manufacture of a complementary type MIS type transistor largely by forming a P type semiconductor layer in an N type well region and directly shaping a source electrode and a drain electrode to the surface of the P type semiconductor layer by aluminum. CONSTITUTION:In a P channel type transistor forming region 2, a P type thin layer is formed on the contacting surface of aluminum because aluminum is a trivalent metal when a P type semiconductor layer 5' is shaped on the surface of an N type well region 7 and a source electrode and a drain electrode are formed directly to the surface of the layer 5' by aluminum. Consequently, a source layer and a drain layer need not be shaped particularly through the diffusion of an impurity, etc. because the P type thin layer functions as the source layer and the drain layer. Accordingly, a diffusion process for forming the source layer and the drain layer in the P channel type MOS transistor as seen in conventional devices is removed. |
