SEMICONDUCTOR STORAGE DEVICE

摘要

PURPOSE:To increase the readout speed and optimize the sense margin by connecting a capacitive element to the common source line of a sense amplifier and setting a couple of data lines to a desired precharge level. CONSTITUTION:An MOS capacitor Cmp or Cmn utilizing the gate of an MOS FET is connected selectively to one of common source lines CSp and CSm of the sense amplifier SA equipped with MOSFETs Q5 and Q6 for controlling connections with a high and a low power source. This connection of the capacitor sets precharge levels of a couple of data lines D and D' to a desired value, and the precharge levels are not set to a half as high as a source voltage VCC, but adjusted to the optimum level according to data lines at sides L and H; and the rising of the data lines is speeded up, the readout speed is increased, and the sense margin is optimized.