| 摘要 |
PURPOSE:To obtain a reference voltage generator, a temperature change thereof is small, by forming two IGFETs having silicon-gate electrodes having different conduction types in an silicon-monolithic semiconductor integrated circuit chip. CONSTITUTION:A thermal oxide film 102 is formed on the surface of a semiconductor substrate 101, and a gate oxide film (SiO2) 103 is shaped to the surface of the semiconductor substrate exposed through etching. Silicon is deposited on the whole main surface, and a polycrystalline silicon layer is formed and etched selectively. A CVD-SiO2 film 105 is deposited, and left only on a high resistance section such as a memory cell load resistor and the polycrystalline silicon layer in an intrinsic level gate section 104a. Phosphorus is diffused into the semiconductor substrate 101 while using the polycrystalline silicon layer as a mask to shape source regions and drain regions 106. An impurity is also introduced into the polycrystalline silicon layer at that time, and gate electrodes 104b, a direct contact 104c and a polycrystalline silicon wiring section 104d are formed. |
