发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <p>PURPOSE:To provide a semiconductor integrated circuit device of the master slice type equipped with a high degree of wiring freedom by a method wherein a basic element assembly is used composed of complementary MIS transistors. CONSTITUTION:Several tens to hundreds of basic cells 21 are longitudinally arranged in a region 20 for basic cells and 10-30 wirings are provided in a wiring space 22 longitudinally arranged in the region 20. A wiring space 23 is laterally formed between basic cells 21, wherein only 1-4 wirings may be accommodated. The presence of a larerally arranged wiring space 23 between basic cells 21 allows wirings to be laterally distributed. With the gate electrode terminal of a basic cell being led out, with its right half symmetrical to its left half, into a longitudinally arranaged wiring space 22, wiring may be accomplished with a great case, resulting in the enhanced freedom of wiring.</p>
申请公布号 JPS60242639(A) 申请公布日期 1985.12.02
申请号 JP19850060308 申请日期 1985.03.25
申请人 FUJITSU KK 发明人 MATSUMURA NOBUTAKE;HOSHIKAWA RIYUUSUKE;SUGIURA YOSHIHIDE;ICHIKAWA HIROAKI;SATOU SHIYOUJI
分类号 H01L21/8234;H01L21/82;H01L23/525;H01L27/088;H01L27/118 主分类号 H01L21/8234
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