| 摘要 |
PURPOSE:To selectively form a P type and an N type diffusion layers of different diffusion depth simultaneously by performing a diffusion by a method wherein diffusion controlling films are provided partially or all over a diffusion window, and the depth of the diffusion layer is controlled using these diffusion controlling films. CONSTITUTION:A diffusion preventing film 3 is formed on the surface 2a of the layer 2 to be diffused provided on the surface 1a of a substrate 1. Subsequently, a plurality of diffusion windows 4a and 4b to be used for shallow diffusion and deep diffusion are perforated on the SiN film using ordinary lithographic technique, and the surface 2a of the epitaxial layer, which is the layer 2 to be diffused, is exposed. Then, a diffusion controlling film 5 is formed at least on the surface 2a of the epitaxial layer 2 which is exposed to the shallow diffusion window 4a. Subsequently, an etching is performed on an SiO2 film in such a manner that at least the SiO2 film on the shallow diffusion window 4a is left using ordinary lithographic technique, and the SiO2 film of zinc or tin, for example, is performed through the shallow diffusion window 4a and the deep diffusion window 4b using an impurity deposition method, a deep diffusion layer 6 and a shallow diffusion layer 7 can be formed simultaneously. |
