发明名称 COMPOUND TYPE MAGNETIC BUBBLE MEMORY ELEMENT
摘要 PURPOSE:To widen the range of a bias magnetic field where a magnetic bubble can be present by setting the distance between a soft magnetic material element piece used for a connection part and the bottom of the recessed part of an ion implantation transfer path closest to it so that the length of a projection in a film surface where the magnetic bubble held satisfies specific relation. CONSTITUTION:The soft magnetic material element piece 1 and the bottom 4 of the recessed part of the ion implantation transfer path 3 closest to it are arranged at such distance that l/d>=3 holds, where l is the length of the projection in the film surface in which the magnetic bubble is held and (d) is the diameter of the magnetic bubble. Consequently, the range wherein the magnetic bubble can be present is as large as or wider than the range of a bias magnetic field wherein a magnetic bubble can be present on the ion implantation path 3 at sufficient distance from the soft magnetic material 1.
申请公布号 JPS60242578(A) 申请公布日期 1985.12.02
申请号 JP19840096452 申请日期 1984.05.16
申请人 HITACHI SEISAKUSHO KK 发明人 KODAMA NAOKI;SUZUKI MAKOTO;TAKEUCHI TERUAKI;TAKESHITA MASATOSHI
分类号 G11C11/14;G11C19/08 主分类号 G11C11/14
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