| 摘要 |
PURPOSE:To microminiaturize a semiconductor by accumulating a semiconductor layer on an accumulated electrode material, etching it in the prescribed pattern, and then alloying an electrode material and the layer, thereby eliminating the residue of the layer material. CONSTITUTION:A base region 2, an emitter region 3 and an oxide film 4 are formed on the surface of a silicon substrate 1. Then, an aluminum layer 9 is then formed by depositing or sputtering. Then, a polysilicon or silicon film 10 is formed by sputtering. Subsequently, the film 10 is etched with nitric fluoride. Thereafter, the layer 9 is partly etched. Then a heat treatment is performed at 300-350 deg.C to form an alloy 11 of the layers 9, 10. Since the residue of the material (silicon) of the film 10 does not remain, the step of removing the residue can be eliminated, and even if a hole 7 is formed, the shallow region 3 is not eroded.
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