METHOD AND DEVICE FOR FABRICATING SILICON OXIDE

摘要

The present invention implements a silicon oxide film with a positive thin film characteristic by a low temperature process by using a simpler installation configuration. The present invention provides a method for forming a silicon oxide film by using a vapor source evaporated from a liquefied source containing silicon. The method includes a step of carrying the vapor source to a reactor by using an NO-based additional gas as a carrier gas.