| 摘要 |
PURPOSE:To enhance the uniformity in quality of an amorphous Si film by a method wherein the titled device is so formed that the product of an angle of inclination of the end of an electrode in contact with amorphous Si with the film thickness of said electrode becomes 10mum squared or less. CONSTITUTION:A vertical CCD8 made of an N<+> buried channel CCD and an N<+> accumulation diode 9 are formed in a P type Si substrate 7. Poly Si electrodes 10 serving as transfer electrodes are formed on the CCD8. The first electrode 2 of Al or the like is formed on the diode 9 into a required shape. Thereafter, the first electrode 2 is partly exposed by forming a smoothing layer 1. The second electrode 3 is formed thereon so that the product of an angle of inclination 4 of the electrode ends with the film thickness 5 of this electrode may become 10mum squared or less under sufficient inclination of the electrode end; then, the Mo layer is exfoliated. An amorphous Si layer 12 is formed thereon, and further a transparent conductive film 13 is formed. |
