| 摘要 |
PURPOSE:To improve the heat dissipating characteristic by a method wherein an Si transistor is adhered to an Si carbide substrate of fin-integral structure. CONSTITUTION:A pellet 1 of Si transistor is made integral with the Si carbide ceramic substrate 2' with fins on one surface via solder layer 5. The substrate 2' is made of an SiC sintered body containing 0.1-3wt% of Be or Be compound. The solder layer 5 is made of Au-Si, and the Si is preferably contained at 3- 10atom%. Since an Si carbide substrate of fin-integral structure is used, the thermal fatigue resistance improves. |
