| 摘要 |
PURPOSE:To draw clearly desired patterns, by controlling the slope of a material so that the irradiated region can become vertical to the energy beam in the case where patterns are exposed separately on a curved pattern forming face. CONSTITUTION:Energy beam B is irradiated onto a material 2a with a curved pattern forming face 3a to expose patterns separately, while the slope of the material 2a is controlled so that the area C irradiated by the energy beam B can become vertical to the energy beam B. In this way, even if the pattern forming face of a mask or a reticle is curved, the patterns can be drawn clearly by the energy beam irradiation, so that stable manufacture of the curved reticle or the curved mask which has been desired in an electron beam exposing method, for example, of a photoelectron image projecting system can be realized. |
