| 摘要 |
PURPOSE:To make a difference voltage applied to a sensor amplifier larger and to increase an action margin by connecting one terminal of a storage accumulation capacity to one end of a complementary bit line and the other terminal to the other end of said line through a selection means. CONSTITUTION:When a selection signal having larger voltage than a power supply voltage VCC to a word line Wi; a memory cell 11, etc., are selected through a transfer gate 13 connected to one bit line 1 of complementary bit lines. When a power supply potential VDD and grounding potential are applied to the bit line 1 and a bit line 2, respectively, a node 14 of a storage accumulation capacity 12 between the gate 13 and the bit line 2 goes to the potential VDD. Then, when the line Wi is dropped to a load potential to cause the gate 13 to be cut off, and the bit lines 1 and 2 are precharged to the potential VCC, the potential of the node 14 rises to that twice the potential VDD, and an information 1 is written at a high potential level. As a result, a difference voltage supplied to a sensor amplifier S at the time of reading becomes larger, and an action margin of a dynamic semiconductor memory device can be improved. |
