| 摘要 |
PURPOSE:To obtain an amorphous silicon photosensor, by which the discrimination between the light of a red radiation streak and the light of a red streak is easily performed, by a method wherein two pieces of pin type photodiodes are formed by polymerizing while the polarities thereof are faced reversely in an amorphous Si photoelectromotive force type sensor. CONSTITUTION:A transparent electrode film 2 is adhered on a transparent insulating substrate 1, which is the light incidence side, and amorphous Si layers 3, 4 and 5 of a p type, an i type and an n type are laminatedly formed on this. At this time, the thickness of the i type layer 4 is being prescribed to 500- 1,500Angstrom . An i type amorphous Si layer 6 and a p type layer 7 are laminated by superposing on the layer 5 while the polarities thereof are reversely faced and a back electrode 8 is adhered on the layer 7. At this time, the thickness of the i type layer 6 is also being prescribed to 5,000-10,000Angstrom . In such a way, the color discrimination is accurately performed by utilizing that the amorphous silicon layers have a larger absorptive power for the light of a blue-green stresk and have a smaller absorptive power for the light of a red streak, and furthermore, by specifying the thickness of the i type layer. |
